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| 2014. 3. 31 1/2 semiconductor technical data kdr720e schottky barrier type diode revision no : 3 for high speed switching circuit. for small current rectification. features h low forward voltage : v f =0.55v(max). h i o =200ma recification possible. maximum rating (ta=25 ? ) 1. anode 2. cathode esc dim millimeters a b c d e 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 cathode mark d c b a 1 2 e f 0.13 0.05 f g + _ + _ + _ + _ + _ + _ 0.20 0.10 + _ gg electrical characteristics (ta=25 ? ) type name marking b u characteristic symbol test condition min. typ. max. unit forward voltage v f i f =200ma - - 0.50 v reverse current i r v r =10v - - 30 a characteristic symbol rating unit reverse voltage v r 30 v average forward current i o 200 ma forword surge current i fsm 1 a power dissipation p d 150* mw junction temperature t j 125 ? storage temperature t stg -40 q 125 ? * mounted on a glass epoxy circuit board of 20 ??20mm pad dimension of 4 ??4mm
2014. 3. 31 2/2 kdr720e revision no : 3 v f - ta forward voltage v f (v) -40 0 0.1 0.2 0.3 0.4 0.5 i f - v f forward voltage v f (v) 0 forward current i f (ma) 51015202530 10 1 1 10 2 10 3 10 -4 10 -3 1 10 -2 10 -1 10 1 10 2 10 3 10 4 i r - v r reverse voltage v r (v) reverse current i r ( a) 080 40 120 200 160 ambient temperature ta ( c) reverse voltage v r (v) c t - v r total capacitance c t (pf) 0 0 4 20 24 28 8 12 16 32 ta=25 c 515 10 20 30 25 f=1mhz i =1ma f v =30v r v =10v r v =5v r i =100ma f i =200ma f 0 0.1 0.2 0.3 0.4 0.5 i r - ta reverse current i r ( a) 10 1 10 4 10 2 10 3 -40 04080 160 120 200 ambient temperaure ta ( c) ta=150 c ta=-25 c ta=25 c ta=100 c ta=150 c ta=-25 c ta=25 c ta=100 c |
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